HYB3164400J Datasheet, PDF (9/28 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
AC Characteristics (note: 6,7,8)
T_A = 0 to 70 ˚C,V_CC = 3.3 ± 0.3 V
Parameter
common parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for HYB3164400
Refresh period for HYB3165400
Symbol
HYB
3164(5)400
J/T-50
min. max.
HYB
3164(5)400
J/T-60
min. max.
Unit Note
t_RC
90
–
110 –
ns
t_RP
30
–
40
–
ns
t_RAS
50
100k 60
100k ns
t_CAS
13
100k 15
100k ns
t_ASR
0
–
0
–
ns
t_RAH
8
–
10
–
ns
t_ASC
0
–
0
–
ns
t_CAH
10
–
10
–
ns
t_RCD
18
37
20
45
t_RAD
13
25
15
30
ns
t_RSH
13
–
15
–
ns
t_CSH
50
–
60
–
ns
t_CRP
5
–
5
–
ns
t_T
3
30
3
30
ns 7
t_REF
–
128 –
128 ms
t_REF
–
64
–
64
ms
Read Cycle
Access time from RAS
t_RAC
Access time from CAS
t_CAC
Access time from column address
t_AA
OE access time
t_OEA
Column address to RAS lead time
t_RAL
Read command setup time
t_RCS
Read command hold time
t_RCH
Read command hold time referenced t_RRH
to RAS
–
50
–
60
ns 8, 9
–
13
–
15
ns 8, 9
–
25
–
30
ns 8, 10
–
13
–
15
ns 8
25
–
30
–
ns
0
–
0
–
ns
0
–
0
–
ns 11
0
–
0
–
ns 11
Semiconductor Group
69