HYB3164400J Datasheet, PDF (4/28 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

TRUTH TABLE
HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
FUNCTION
RAS
Standby
Read
Early-Write
Delayed-Write
Read-Modify-Write
Fast Page Mode Read 1st Cycle
2nd Cycle
Fast Page Mode Early 1st Cycle
Write
2nd Cycle
Fast Page Mode RMW 1st Cycle
2st Cycle
RAS only refresh
CAS-before-RAS refresh
Test Mode Entry
Hidden Refresh
READ
WRITE
H
L
L
L
L
L
L
L
L
L
L
L
H-L
H-L
L-H-L
L-H-L
CAS
H-X
L
L
L
L
H-L
H-L
H-L
H-L
H-L
H-L
H
L
L
L
L
WRITE
X
H
L
H-L
H-L
H
H
L
L
H-L
H-L
X
H
L
H
L
OE
X
L
X
H
L-H
L
L
X
X
L-H
L-H
X
X
X
L
X
ROW COL
ADDR ADDR
I/O1-
I/O4
X
X High Impedance
ROW COL
Data Out
ROW COL
Data In
ROW COL
Data In
ROW COL Data Out, Data In
ROW COL
Data Out
n/a COL
Data Out
ROW COL
Data In
n/a
ROW
n/a
ROW
X
X
ROW
ROW
COL
COL
COL
n/a
n/a
n/a
COL
COL
Data In
Data Out, Data In
Data Out, Data In
High Impedance
High Impedance
High Impedance
Data Out
Data In
Semiconductor Group
64