HYB3164400J Datasheet, PDF (10/28 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
T_A = 0 to 70 ˚C,V_CC = 3.3 ± 0.3 V
Parameter
Symbol
HYB
3164(5)400
J/T-50
min. max.
CAS to output in low-Z
t_CLZ
Output buffer turn-off delay
t_OFF
Output buffer turn-off delay from OE t_OEZ
Data to OE low delay
t_DZO
CAS high to data delay
t_CDD
OE high to data delay
t_ODD
0
–
–
13
–
13
0
–
13
–
13
–
HYB
3164(5)400
J/T-60
min. max.
0
–
–
15
–
15
0
–
15
–
15
–
Unit Note
ns 8
ns 12
ns 12
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
CAS delay time from Din
t_WCH
t_WP
t_WCS
t_RWL
t_CWL
t_DS
t_DH
t_DZC
8
–
8
–
0
–
13
–
13
–
0
–
10
–
0
–
10
–
10
–
0
–
15
–
15
–
0
–
10
–
0
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-Modify-Write Cycle
Read-write cycle time
t_RWC
126 –
RAS to WE delay time
t_RWD
68
–
CAS to WE delay time
t_CWD
31
–
Column address to WE delay time
t_AWD
43
–
OE command hold time
t_OEH
13
–
150 –
80
–
35
–
50
–
15
–
ns
ns 15
ns 15
ns 15
ns
Fast Page Mode Cycle
Fast page mode cycle time
t_PC
35
–
40
–
ns
CAS precharge time
t_CP
10
–
10
–
ns
Access time from CAS precharge
t_CPA
–
30
–
35
ns 8
RAS pulse width
t_RAS
50
200k 60
200k ns
Semiconductor Group
70