HYB3164400J Datasheet, PDF (15/28 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
V
RAS
IH
VIL
V
IH
CAS
VIL
V
IH
Address _VIL
V
IH
WRITE
VIL
V
IH
OE
VIL
V
I/O1-I/O4 ^IH
(Inputs) _VIL
V
I/O1-I/O4 ^OH
(Outputs) _VOL
tRC
tRAS
tRP
tRCD
tCSH
tRSH
tCAS
tRAD
tASR
tASC
tRAL
tCAH
Row
Address
t_RAH
Column
Address
tCWL
tRWL
tWP
tCRP
tASR
.
Row
Address
tOEH
tDZO
tDZC
tODD
tDS ^tDH
tOEZ
tCLZ
tOEA
Hi-Z
Valid Data
Hi-Z
“H” or “L”
Write Cycle (OE Controlled Write)
Semiconductor Group
75