HYB3164400J Datasheet, PDF (16/28 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
tRWC
tRAS
tRP
V
RAS
IH
VIL
V
IH
CAS
VIL
V
Address ^IH
VIL
V
IH
WRITE _VIL
V
IH
OE
VIL
V
I/O1-I/O4 ^IH
(Inputs) VIL
V
I/O1-I/O4 ^OH
(Outputs) VOL
tRCD
tCSH
tRSH
tCAS
t_RAH
tASR
Row
Address
tRAD
tCAH
tASC
Column
Address
tAWD
tCWD
tRWD
tCWL
tRWL
tWP
tAA
tRCS
tOEA
tOEH
tDZC
tDZO
tCLZ
tCAC
tRAC
“H” or “L”
tDS
tODD
tDH
Valid
Data in
tOEZ
Data
Out
tCRP
tASR
Row
Address
Read-Write (Read-Modify-Write) Cycle
Semiconductor Group
76