HYB3164400J Datasheet, PDF (8/28 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM

HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
DC Characteristics (cont’d)
T_A = 0 to 70 ˚C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V, (values in brackets for HYB 3165400J/T)
Parameter
Symbol Limit Values Unit Note
min. max.
Average Vcc supply current, during RAS-only
I_CC3
refresh cycles:
-50 ns version
–
-60 ns version
–
(RAS cycling: CAS = VIH: tRC = tRC min.)
110 (140) mA 2) 4)
100 (120) mA
Average Vcc supply current,
I_CC4
during fast page mode:
-50 ns version
–
-60 ns version
–
(RAS = V_IL, CAS, address cycling: tPC=tPC min.)
Standby Vcc supply current
(RAS=CAS= Vcc-0.2V)
I_CC5
–
85 (85) mA 2) 3) 4)
75 (75) mA
200
A–
Average Vcc supply current, during CAS-before- I_CC6
RAS refresh mode:
-50 ns version
–
-60 ns version
–
(RAS, CAS cycling: tRC = tRC min.)
110 (140) mA 2) 4)
100 (120) mA
Self Refresh Current
I_CC7
–
400
A
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Capacitance
T_A = 0 to 70 ˚C,V_CC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,A12)
C_I1
–
5
pF
Input capacitance (RAS, CAS, WRITE, OE)
C_I2
–
7
pF
I/O capacitance (I/O1-I/O4)
C_IO
–
7
pF
Semiconductor Group
68