HYB314100BJBJL-50- Datasheet, PDF (9/23 Pages) Siemens Semiconductor Group – 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 ˚C, V_CC = 3.3 V ± 0.3 V, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle t_PRWC 55 –
60 –
70 –
ns
time
CAS precharge to WE
t_CPWD 30
–
35 –
40 –
ns
CAS-before-RAS refresh cycle
CAS setup time
t_CSR
10 –
10 –
10 –
ns
CAS hold time
t_CHR
10 –
10 –
10 –
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
5
–
ns
Write to RAS precharge time
t_WRP
10
–
10 –
10 –
ns
Write hold time referenced to
t_WRH
10
–
10 –
10 –
ns
RAS
CAS-before-RAS counter test
cycle
CAS precharge time
t_CPT
35 –
40 –
40 –
ns
Test Mode
Write command setup time
Write command hold time
t_WTS
10
–
10 –
10 –
ns
t_WTH
10
–
10 –
10 –
ns
Semiconductor Group
9