HYB314100BJBJL-50- Datasheet, PDF (2/23 Pages) Siemens Semiconductor Group – 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
The HYB 314100BJ/BJL is the new generation dynamic RAM organized as 4 194 304 words by
1-bit. The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit
techniques to provide wide operation margins, both internally and for the system user. Multiplexed
address inputs permit the HYB 514100BJ/BJL to be packed in a standard plastic P-SOJ-26/20
package. This package size provides high system bit densities and is compatible with commonly
used automatic testing and insertion equipment. System oriented features include single + 3.3 V
(± 0.3 V) power supply, direct interfacing with high performance logic device families.
Ordering Information
Type
HYB 314100BJ-50
Ordering Code
Q67100-Q2035
HYB 314100BJ-60
Q67100-Q2037
HYB 314100BJ-70
Q67100-Q2039
HYB 314100BJL-50 on request
HYB 314100BJL-60 on request
HYB 314100BJL-70 on request
Package
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
Descriptions
3.3 V DRAM
(access time 50 ns)
3.3 V DRAM
(access time 60 ns)
3.3 V DRAM
(access time 70 ns)
3.3 V Low Power DRAM
(access time 50 ns)
3.3 V Low Power DRAM
(access time 60 ns)
3.3 V Low Power DRAM
(access time 70 ns)
Semiconductor Group
2