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| OBTS949 Datasheet, PDF (8/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch | |||
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BTS 949
Typ. current limit versus RCC
ID(lim) = f(RCC); Tj=25°C
Parameter: VIN
250
A
10V
200
ID
175
150
125
100
5V
75
50
25
0
10
-2
10 -1
10 0
10 1
10 2
Transient thermal impedance
ZthJC = f(tP)
Parameter: D=tP/T
10 0
K/W
D=0.5
0.2
ZthJC10 -1
0.1
0.05
10 -2
0.02
0.01
0.005
⦠10 4
RCC
Typ. current sense characteristics
VCC = f(ID); VIN=10V
Parameter: RCC, Tj
600
V
no Rcc
500
VCC 450
400
350
25°C
82 Ohm
300
125°C
250
47 Ohm
200
150
22 Ohm
100
50
0
0
10 20 30 40 50 A 65
ID
10 -3
0
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
s
tP
10 2
Semiconductor Group
Page 8
14.07.1998
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