OBTS949 Datasheet, PDF (2/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch

BTS 949
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Drain source voltage
Drain source voltage for short circuit protection
R_CC = 0 Ω
without R_CC
V_DS
V_DS(SC)
Continuous input current ¹⁾
I_IN
-0.2V ≤ V_IN ≤ 10V
V_IN < -0.2V or V_IN > 10V
Operating temperature
T_j
Storage temperature
T_stg
Power dissipation
P_tot
T_C = 25 °C
Unclamped single pulse inductive energy
E_AS
I_D(ISO) = 19 A
Electrostatic discharge voltage (Human Body Model) _VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection V_LoadDump2) = V_A + V_S
V_LD
V_IN=low or high; V_A=13.5 V
t_d = 400 ms, R_I = 2 Ω, I_D=0,5*19A
t_d = 400 ms, R_I = 2 Ω, I_D= 19A
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
Value
60
15
50
no limit
| I_IN | ≤ 2
- 40 ... +150
- 55 ... +150
240
6000
3000
110
92
E
40/150/56
Unit
V
mA
°C
W
mJ
V
V
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB: 3)
R_thJC
R_thJA
R_thJA
0.7
K/W
75
45
1_{A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)}
2_{VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839}
3_{Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical}
without blown air.
Semiconductor Group
Page 2
14.07.1998