OBTS949 Datasheet, PDF (7/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch

Typ. transfer characteristics
I_D = f(V_IN); V_DS=12V; T_j=25°C
160
A
I_D ¹²⁰
100
80
60
40
20
0
0
1
2
3
4
5
Typ. output characteristic
I_D = f(V_DS); T_j=25°C
Parameter: V_IN
150
10V
A
I_D
100
75
6V
5V
V
7
V_IN
BTS 949
Typ. short circuit current
I_Dlim = f(Tj); R_CC=0Ω, V_DS=12V
Parameter: V_IN
250
10V
A
I_D
9V
8V
150
7V
100
6V
5V
50
4V
3V
0
-50 -25 0 25 50
Safe Operating Area
75 100 °C 150
T_j
I_D(SC) = f(V_DS); T_j=25°C
300
A
I_D
200
150
50
4V
100
25
50
VIN=3V
0
0
1
2
3
4
5
V
7
V_DS
0
0
10
20
30
V
50
V_DS
Semiconductor Group
Page 7
14.07.1998