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OBTS949 Datasheet, PDF (3/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch
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BTS 949
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150°C, ID = 10 mA
VDS(AZ)
Off state drain current
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
ID = 3,9 mA
IDSS
VIN(th)
Input current - normal operation, ID<ID(lim):
VIN = 10 V
IIN(1)
Input current - current limitation mode, ID=ID(lim): IIN(2)
VIN = 10 V
Input current - after thermal shutdown, ID=0 A: IIN(3)
VIN = 10 V
Input holding current after thermal shutdown
IIN(H)
Tj = 25 °C
Tj = 150 °C
On-state resistance
ID = 19 A, VIN = 5 V, Tj = 25 °C
ID = 19 A, VIN = 5 V, Tj = 150 °C
RDS(on)
On-state resistance
ID = 19 A, VIN = 10 V, Tj = 25 °C
ID = 19 A, VIN = 10 V, Tj = 150 °C
RDS(on)
Nominal load current (ISO 10483)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
ID(ISO)
Values
Unit
min. typ. max.
60
-
73 V
-
-
25 µA
1.3 1.7 2.2 V
-
- 100 µA
- 400 1000
1500 3000 6000
500 -
300 -
-
18
-
30
-
-
mΩ
22
44
-
14 18
-
25 36
19
-
-A
Semiconductor Group
Page 3
14.07.1998
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