 English |
|
|
|
|
|
|
|
| OBTS949 Datasheet, PDF (1/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch | |||
| |||
|
HITFET®BTS 949
Smart Lowside Power Switch
Features
Product Summary
⢠Logic Level Input
Drain source voltage
⢠Input Protection (ESD)
On-state resistance
⢠Thermal Shutdown
Current limit
⢠Overload protection
Nominal load current
⢠Short circuit protection
Clamping energy
⢠Overvoltage protection
⢠Current limitation
⢠Maximum current adjustable with external resistor
⢠Current sense
⢠Status feedback with external input resistor
⢠Analog driving possible
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
18 mâ¦
9.5 A
19 A
6000 mJ
Application
⢠All kinds of resistive, inductive and capacitive loads in switching or
linear applications
⢠µC compatible power switch for 12 V and 24 V DC applications
⢠Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
Vbb
+
2
LOAD
M
NC
1
IN
dv/dt
limitation
Current
limitation
Overvoltage
protection
Drain
3
4 CC
RCC
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
5
HITFET®
Semiconductor Group
Page 1
14.07.1998
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese