OBTS949 Datasheet, PDF (6/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch

Maximum allowable power dissipation
P_tot = f(T_c)
BTS 949
240
W
200
P_tot ¹⁸⁰
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 150
150
On-state resistance
R_ON = f(T_j); I_D= 19A; V_IN=5V
BTS 949
On-state resistance
R_ON = f(T_j); I_D=19A; V_IN=10V
40
mΩ
R_DS(on³₎⁰
25
20
15
max.
typ.
10
5
0
-50 -25 0 25 50 75 100 °C 150
T_j
Typ. input threshold voltage
V_IN(th) = f(T_j); I_D=3,9A; V_DS=12V
45
2.0
mΩ
V
35
R_DS(on)
30
25
20
15
10
5
max.
typ.
1.6
V_IN(th)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 °C 150
T_j
Semiconductor Group
Page 6
0.0
-50 -25 0 25 50 75 100 °C 150
T_j
14.07.1998