BFP520 Datasheet, PDF (8/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

BFP 520
Noise figure F = f (I_C)
V_CE = 2 V, Z_S = Z_Sopt
3.0
dB
Noise figure F = f (I_C)
V_CE = 2 V, f = 1.8 GHz
3.0
dB
2.0
2.0
1.5
1.5
f = 6 GHz
f = 5 GHz
1.0
f = 4 GHz
1.0
Zs = 50Ohm
f = 3 GHz
Zs = Zsopt
f = 2.4 GHz
0.5
f = 1.8 GHz
f = 0.9 GHz
0.5
0.0
0
5 10 15 20 25 30 mA 40
I_C
Noise figure F = f ( f )
V_CE = 2 V, Z_S = Z_Sopt
3.0
dB
0.0
0
5 10 15 20 25 30 mA 40
I_C
Source impedance for min.
Noise Figuren vers. Frequency
V_CE = 2 V, I_C = 2 mA / 5 mA
+j50
+j25
+j100
2.0
1.5
1.0
IC = 5 mA
0.5
IC = 2 mA
0.0
0.0
1.0
2.0
3.0
4.0
5.0 GHz 6.5
f
SSeemmicioconndduuctcotor ^rGGrorouupp
8⁸
+j10
0
10
-j10
4GHz
3GHz
5GHz
6GHz
25
50 100
1.8GHz
0.9GHz
0.45GHz
2mA
5mA
-j25
-j100
-j50
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