BFP520 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

BFP 520
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 1.5 V, I_C = 0
DC current gain
I_C = 20 mA, V_CE = 4 V
AC characteristics
V_(BR)CEO ^2.5
3
3.5 V
I_CBO
-
- 200 nA
I_EBO
-
-
35 nA
h_FE
50 80 150 -
Transition frequency
I_C = 30 mA, V_CE = 2 V, f = 2 GHz
Collector-base capacitance
V_CB = 2 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 2 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 2 mA, V_CE = 2 V, Z_S = Z_Sopt ,
f = 1.8 GHz
Power gain ¹⁾
I_C = 20 mA, V_CE = 2 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
Insertion power gain
I_C = 20 mA, V_CE = 2 V, f = 1.8 GHz,
Z_S = Z_L = 50Ω
Third order intercept point at output
V_CE = 2 V, f = 1.8 GHz, Z_S=Z_Sopt, Z_L=Z_Lopt ,
I_C = 20 mA
I_C = 7 mA
1dB compression point
V_CE = 2 V, f = 1.8 GHz, Z_S=Z_Sopt, Z_L=Z_Lopt ,
I_C = 20 mA
I_C = 7 mA
f_T
C_cb
C_ce
C_eb
F
G_ms
|S₂₁|²
IP₃
P_-1dB
-
45
- GHz
- 0.06 - pF
-
0.3
- pF
- 0.35 - pF
- 0.95 - dB
-
23
- dB
-
21
- dB
dBm
-
25
-
-
17
-
dBm
-
12
-
-
5
-
1) G_ms = |S₂₁ / S_12|
SSeemmicioconndduuctcotor ^rGGrorouupp
2) G_ma = |S₂₁ / S_12| (k-(k2-1)1/2)
2²
Sep-₁0₉9₉₈-1_-19₁9_-08₁