BFP520 Datasheet, PDF (3/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

BFP 520
Common Emitter S-Parameters
f
GHz
S₁₁
MAG
ANG
S₂₁
MAG
ANG
V_CE = 2 V, /_C = 20 mA
0.01 0.7244
-0.7
0.1 0.7251
-8.4
0.5 0.6368 -40.7
1
0.4768 -73.6
2
0.2816 -123.8
3
0.225
-166
4
0.2552 156.2
5
0.3207 133.6
6
0.3675 118.7
32.273
31.637
27.293
19.6
11.02
7.48
5.636
4.488
3.683
178.6
171.4
140.7
113.5
84.9
67.6
53
39.7
27.5
S₁₂
MAG
ANG
0.0007
0.0041
0.0194
0.0351
0.00574
0.0788
0.0994
0.1177
0.1343
69.4
92.8
75.9
66.5
56.3
49.2
41.5
32.9
24.7
S₂₂
MAG
ANG
0.9052
0.9363
0.8523
0.6496
0.3818
0.2407
0.1544
0.095
0.0545
1.2
-4.4
-26.7
-46
-64.6
-73.6
-95.3
-128.9
177.6
Common Emitter Noise Parameters
f
F_min ¹⁾ G_a ¹⁾
Γ_opt
R_N
GHz dB
dB
MAG
ANG
Ω
V_CE = 2 V, I_C = 2 mA
0.9 0.72
21.5
0.64
14
21.5
1.8 0.95
20
0.49
30
19
2.4 1.07
16
0.45
41
18
3
1.3
14.5
0.4
54
16.5
4
1.35
11.6
0.26
82
12.5
5
1.7
9.5
0.14
128
9
6
1.95
8
0.12
151
8
V_CE = 2 V, I_C = 5 mA
0.9 0.89
22
0.49
12
16
1.8 1.08
20.5
0.38
22
14
2.4 1.12
18
0.34
33
14
3
1.32
16.2
0.29
45
13.5
4
1.35
13.5
0.156
71
11
5
1.6
11.5
0.08
120
10
6
1.8
10.5
0.07
150
8
r_n
-
0.43
0.38
0.36
0.33
0.25
0.18
0.16
0.32
0.28
0.28
0.27
0.22
0.2
0.16
F_50Ω ²⁾ |S₂₁|^{2 2)}
dB
dB
1.75
1.55
1.6
1.7
1.6
1.85
1.95
16.1
15.14
14.07
13.13
11.49
9.87
8.28
1.5
21.94
1.38
19.34
1.4
17.54
1.5
16.01
1.45
13.82
1.65
11.93
1.8
10.23
1) Input matched for minimum noise figure, output for maximum gain
2) Z_S = Z_L = 50Ω
For more and detailed S- and Noise-parameters please contact your local Siemens
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:
http://www.siemens.de/Semiconductor/products/35/35.htm
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