BFP520 Datasheet, PDF (7/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

BFP 520
Power gain G_ma, G_ms, |S₂₁|² = f ( f )
V_CE = 2V, I_C = 20 mA
44
dB
36
32
G_ms
28
24
20
16
|S₂₁|²
12
G_ma
8
4
0
0.0
1.0
2.0
3.0
4.0 GHz
6.0
f
Power gain G_ma, G_ms = f (I_C)
V_CE = 2V
f = parameter in GHz
32
0.9
dB
24
1.8
2.4
20
3
16
4
5
12
6
8
4
0
0
5 10 15 20 25 30 35 mA 45
I_C
Power gain G_ma, G_ms = f (V_CE)
I_C = 20 mA
f = parameter in GHz
32
dB
0.9
Collector-base capacitance C_cb = f (V_CB)
V_BE = 0, f = 1MHz
0.35
pF
24
1.8
0.25
2.4
20
3
0.20
16
4
5
0.15
12
6
0.10
8
4
0.05
0
0.0 0.5 1.0 1.5 2.0
SSeemmicioconndduuctcotor ^rGGrorouupp
V
3.0
V_CE
7⁷
0.00
0.0 0.5 1.0 1.5 2.0
V
3.0
V_CB
Sep-₁0₉9₉₈-1_-19₁9_-08₁