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BFP520 Datasheet, PDF (6/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
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BFP 520
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
120
mW
100
90
80
70
60
50
40
30
20
10
0
0
TS
TA
20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Transition frequency fT = f (IC)
f = 2 GHz
VCE = parameter in V
52
GHz
2
44
40
1
36
32
28
24
20
0.75
16
12
8
4
0.5
0
0
5 10 15 20 25 30 35 mA 45
IC
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 3
10 1
D=0
0.005
K/W
0.5
0.2
0.1
0.05
0.02
-
0.01
0.02
0.05
0.1
0.2
0.5
0.01
0.005
D=0
10
2
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
SSeemmicioconndduuctcotor rGGrorouupp
66
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Sep-109998-1-1919-081
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