BFP520 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

NPN Silicon RF Transistor
Preliminary data
• For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding G_a = 20 dB
Noise Figure F = 0.95 dB
• For oscillators up to 15 GHz
• Transition frequency f_T = 45 GHz
• Gold metalization for high reliability
• SIEGET ^® 45 - Line
Siemens Grounded Emitter Transistor
45 GHz f_T - Line
SIEGET^®45 BFP 520
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
BFP 520 APs
Q62702-F1794
1=B 2=E 3=C 4=E
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S ≤ 105 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
2.5
12
1
40
4
100
150
-65 ...+150
-65 ...+150
≤ 450
Package
SOT-343
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
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1¹
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