HYS6472V16200GU Datasheet, PDF (7/17 Pages) Siemens Semiconductor Group – 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules

HYS 64(72)V16200/3222(0)0/64220GU
SDRAM Modules
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V_DD, V_DDQ = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 2.0 mA)
Output low voltage (I_OUT = 2.0 mA)
Input leakage current, any input
(0 V < V_IN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < V_OUT < V_CC)
Symbol
Limit Values
min.
max.
V_IH
2.0
V_IL
– 0.5
V_OH
2.4
V_OL
–
I_I(L)
– 40
V_CC + 0.3
0.8
–
0.4
40
Unit
V
V
V
V
µA
I_O(L)
– 40
40
µA
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
max. max. max. max.
32M×64 32M×72 32M×64 32M×72
Input capacitance
C_I1
45
55
80
90
pF
(A0 to A11, BA0, BA1, RAS, CAS, WE)
Input capacitance (CS0 - CS3)
C_I2
20
25
30
35
pF
Input capacitance (CLK0 - CLK3)
C_ICL
22
38
22
38
pF
Input capacitance (CKE0, CKE1)
C_I3
22
38
50
55
pF
Input capacitance (DQMB0 - DQMB7) C_I4
13
13
20
20
pF
Input/Output capacitance
(DQ0 - DQ63, CB0 - CB7)
C_IO
13
12
20
20
pF
Input Capacitance (SCL, SA0 - 2)
Input/Output Capacitance
C_SC
8
8
8
8
pF
C_SD
10
10
10
10
pF
Semiconductor Group
7
1998-08-01