HYS6472V16200GU Datasheet, PDF (1/17 Pages) Siemens Semiconductor Group – 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules

3.3 V 16M × 64/72-Bit SDRAM Modules
3.3 V 32M × 64/72-Bit SDRAM Modules
3.3 V 64M × 64/72-Bit SDRAM Modules
PC100-168 pin unbuffered DIMM Modules
HYS 64/72V16200GU
HYS 64/72V32220GU
HYS 64/72V32200GU
HYS 64/72V64220GU
Preliminary Information
• 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
• One bank 16M × 64, 16M × 72, 32M × 64 and 32M × 72 organization
• Two bank 32M × 64, 32M × 72, 64M × 64 and 64M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
• JEDEC standard Synchronous DRAMs (SDRAM)
• SDRAM Performance:
f_CK
Clock frequency (max.)
t_AC
Clock access time
• Programmed Latencies:
-8
-8B Units
100 100 MHz
6
6 ns
Product Speed CL
-8
PC100 2
-8B
PC100 3
t_RCD
t_RP
2
2
2
3
• Single + 3.3 V (± 0.3 V) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E²PROM
• Utilizes 32M × 8 SDRAMs in TSOPII-54 packages
• Uses SIEMENS 128Mbit and 256Mbit SDRAM components
• Gold contact pad
• Card Size: 133.35 mm × 31.75 mm × 4.00 mm
Semiconductor Group
1
1998-08-01