HYS6472V4200GU Datasheet, PDF (6/15 Pages) Siemens Semiconductor Group – 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module

HYS64(72)V4200/8220GU
SDRAM-Modules
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V V _{DD, DDQ} = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 2.0 mA)
Output low voltage (I_OUT = 2.0 mA)
Input leakage current, any input
(0 V < V_IN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < V_OUT < V_CC)
Symbol
V_IH
V_IL
V_OH
V_OL
I_I(L)
Limit Values
Unit
min.
max.
2.0
Vcc+ 0.3 V
– 0.5
0.8 V
2.4
–
V
–
0.4 V
– 10
10 µA
I_O(L)
– 10
10 µA
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A11, RAS, CAS, WE) C_I1
Input capacitance (CS0 -CS3, )
C_I2
Input capacitance (CLK0 - CLK3)
C_ICL
Input capacitance (CKE0, CKE1)
C_I3
Input capacitance (DQMB0 - DQMB7)
C_I4
Input / Output capacitance
C_IO
(DQ0-DQ63,CB0-CB7)
Input Capacitance (SCL,SA0-2)
C_sc
Input/Output Capacitance
C_sd
Limit Values
max.
4M x 72
max.
8M x 72
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
8
8
10
10
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Semiconductor Group
6