HYS6472V4200GU Datasheet, PDF (1/15 Pages) Siemens Semiconductor Group – 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module

3.3V 4M x 64/72-Bit 1 BANK SDRAM Module
3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
HYS64(72)V4200GU
HYS64(72)V8220GU
PC66 & PC100 168 pin unbuffered DIMM Modules
• 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules
for PC main memory applications
• One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation
• Optimized for byte-write non-parity and ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
• SDRAM Performance:
f_CK
Clock frequency (max.)
t_AC
Clock access time
• Programmed Latencies :
-8
-8B
-10
100
100
66
6
6
8
Units
MHz
ns
Product Speed
CL
-8
PC100
2
-8B
PC100
3
-10
PC66
2
tRCD
tRP
2
2
2
3
2
2
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E²PROM
• Utilizes 4M x16 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 29,31 mm x 4,00 mm card size with gold contact pads
Semiconductor Group
1
8.98