CFY30 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET
CFY 30
________________________________________________________________________________________________________
Typical Common Source S-Parameters
f
GHz
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
6.4
6.8
7.2
7.6
8.0
8.4
8.8
9.2
9.6
10.0
10.4
10.8
11.2
11.6
12.0
ID = 30 mA UD = 3.5 V Z₀ = 50 Ω
S11
Mag
Ang
1.00
-2
1.00
-8
0.99
-16
0.97
-24
0.95
-32
0.92
-40
0.90
-48
0.87
-58
0.83
-68
0.79
-79
0.75
-91
0.71 -102
0.67 -114
0.63 -126
0.60 -138
0.57 -150
0.54 -162
0.52 -174
0.51
173
0.50
160
0.50
147
0.51
135
0.52
125
0.54
115
0.55
107
0.57
99
0.59
91
0.60
85
0.61
79
0.62
73
0.62
68
S21
Mag
Ang
3.23
178
3.21
171
3.19
162
3.18
153
3.17
143
3.17
135
3.17
127
3.17
119
3.16
109
3.12
99
3.08
88
3.04
78
3.00
68
2.95
58
2.87
49
2.77
40
2.68
31
2.58
22
2.50
14
2.43
5
2.36
-4
2.26
-13
2.15
-22
2.04
-30
1.93
-39
1.82
-47
1.71
-54
1.60
-62
1.51
-69
1.44
-75
1.38
-82
S12
Mag
Ang
0.002
85
0.009
79
0.017
73
0.025
70
0.034
65
0.042
61
0.051
56
0.059
50
0.067
45
0.073
40
0.079
34
0.084
28
0.089
21
0.092
15
0.094
10
0.096
4
0.097
-1
0.098
-6
0.099
-11
0.099
-16
0.099
-20
0.099
-24
0.099 -29
0.099 -33
0.099 -37
0.099 -41
0.100 -44
0.101 -47
0.102 -49
0.103 -52
0.104 -55
S22
Mag
Ang
0.71
-1
0.70
-6
0.69
-11
0.67
-16
0.66
-21
0.65
-26
0.63
-31
0.61
-36
0.58
-42
0.55
-48
0.52
-54
0.50
-60
0.47
-66
0.43
-73
0.38
-81
0.34
-89
0.30
-99
0.27 -109
0.24 -121
0.21 -134
0.18 -148
0.16 -164
0.16
176
0.17
158
0.19
142
0.22
128
0.25
118
0.27
109
0.30
100
0.32
92
0.34
85
Siemens Aktiengesellschaft
pg. 6/6
11.01.1996
HL EH PD 21