CFY30 Datasheet, PDF (3/6 Pages) Siemens Semiconductor Group – GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET
CFY 30
________________________________________________________________________________________________________
Typical Common Source Noise Parameters
I = 15 mA
D
V = 3.5 V
DS
Z = 50 Ω
0
f F_min G_a
Γ_opt
R_n N F_50Ω G(F_{50 Ω})
GHz dB dB MAG ANG Ω - dB
dB
2 1.0 15.5 0.72 27 49 0.17 2.9 10.0
4 1.4 11.5 0.64 61 29 0.17 2.7
9.3
6 2.0 8.9 0.46 101 19 0.30 2.8
7.5
8 2.5 7.1 0.31 153 9 0.31 2.8
6.4
10 3.0 5.8 0.34 -133 14 0.38 3.4
4.2
12 3.5 5.0 0.41 -93 28 0.42 4.1
2.9
Total Power Dissipation Ptot = f (T_S;T_A)
300
P _tot [ m W ]
200
100
T_S
T_A
0
0
Siemens Aktiengesellschaft
50
100
150
TA ; TS [ °C ]
pg. 3/6
11.01.1996
HL EH PD 21