CFY30 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET
CFY 30
________________________________________________________________________________________________________
Typical Common Source S-Parameters
ID = 15 mA UD = 3.5 V Z₀ = 50 Ω
f
GHz
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
6.4
6.8
7.2
7.6
8.0
8.4
8.8
9.2
9.6
10.0
10.4
10.8
11.2
11.6
12.0
S11
Mag
Ang
1.00
-1
1.00
-6
0.99
-14
0.98
-21
0.97
-28
0.96
-36
0.93
-44
0.90
-53
0.87
-62
0.83
-72
0.80
-82
0.77
-92
0.74
-104
0.70
-115
0.66
-127
0.63
-139
0.60
-150
0.57
-162
0.55
-174
0.54
172
0.53
160
0.54
147
0.55
135
0.56
124
0.57
114
0.58
106
0.59
98
0.60
91
0.61
85
0.62
79
0.62
74
S21
Mag
Ang
2.43
178
2.43
171
2.43
162
2.43
154
2.44
145
2.45
137
2.47
129
2.49
120
2.50
111
2.50
102
2.50
93
2.51
83
2.49
73
2.45
64
2.41
54
2.36
45
2.30
37
2.24
27
2.19
17
2.14
8
2.08
-2
2.00
-11
1.92
-21
1.83
-30
1.72
-40
1.61
-48
1.51
-56
1.42
-62
1.35
-69
1.30
-75
1.25
-81
S12
Mag
Ang
0.003
87
0.010
23
0.020
78
0.030
72
0.040
66
0.050
60
0.058
55
0.066
50
0.074
45
0.082
39
0.090
32
0.097
25
0.103
18
0.108
12
0.112
6
0.114
0
0.115
-6
0.116
-11
0.116
-17
0.116
-22
0.115
-27
0.113
-32
0.111
-37
0.109
-42
0.107
-46
0.104
-50
0.102
-53
0.101
-56
0.099
-58
0.098
-60
0.096
-63
S22
Mag
Ang
0.70
-1
0.69
-5
0.68
-11
0.67
-15
0.66
-20
0.65
-26
0.64
-30
0.62
-35
0.60
-41
0.57
-47
0.54
-54
0.50
-61
0.46
-67
0.43
-73
0.40
-80
0.36
-88
0.31
-98
0.27
-110
0.24
-122
0.21
-137
0.19
-154
0.18
-173
0.18
171
0.19
155
0.21
141
0.23
128
0.26
118
0.29
108
0.32
100
0.34
93
0.36
85
Siemens Aktiengesellschaft
pg. 5/6
11.01.1996
HL EH PD 21