CFY30 Datasheet, PDF (4/6 Pages) Siemens Semiconductor Group – GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET
CFY 30
________________________________________________________________________________________________________
Output characteristics I_D = f (V_DS)
50
ID [mA] 40
V_GS =0V
V_GS=-0.2V
V_GS=-0.4V
30
V_GS=-0.6V
20
V_GS =-0.8V
V_GS =-1.0V
10
V _GS =-1.2V
V_GS =-1.4V
0
0
1
2
3
4
5
VDS [V]
Siemens Aktiengesellschaft
pg. 4/6
11.01.1996
HL EH PD 21