CFY30 Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET
CFY 30
________________________________________________________________________________________________________
Electrical characteristics at T_A = 25°C, unless otherwise specified
Characteristics
Symbol min
Drain-source saturation current
V = 3.5 V, V = 0 V
DS
GS
Pinch-off voltage
V = 3.5 V I = 1 mA
DS
D
Transconductance
V = 3.5 V I = 15 mA
DS
D
Gate leakage current
V = 3.5 V I = 15 mA
DS
D
Noise figure
V = 3.5 V I = 15 mA
DS
D
f = 4 GHz
f = 6 GHz
Associated gain
V = 3.5 V I = 15 mA
DS
D
f = 4 GHz
f = 6 GHz
I
DSS
V
GS(P)
g
m
I
G
F
G
a
20
-0.5
20
-
-
-
10
-
Maximum available gain
MAG
V = 3.5 V I = 15 mA f = 6 GHz
-
DS
D
Maximum stable gain
MSG
V = 3.5 V I = 15 mA f = 4 GHz
-
DS
D
Power output at 1 dB compression
P_{1 dB}
V =4V
I = 30 mA f = 6 GHz
-
DS
D
typ
50
-1.3
30
0.1
1.4
2.0
11.5
8.9
11.2
14.4
16
max Unit
mA
80
V
-4.0
mS
-
µA
2
dB
1.6
-
dB
-
-
dB
-
dB
-
dBm
-
Siemens Aktiengesellschaft
pg. 2/6
11.01.1996
HL EH PD 21