CFY30 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET
CFY 30
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Datasheet
* Low noise ( F_min = 1.4 dB @ 4 GHz )
* High gain ( 11.5 dB typ. @ 4 GHz )
* For oscillators up to 12 GHz
* For amplifiers up to 6 GHz
* Ion implanted planar structure
* Chip all gold metallization
* Chip nitride passivation
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CFY 30
Marking
Ordering code Pin Configuration
(tape and reel) 1 2 3 4
A2 Q62703-F97 S D S G
Package 1)
SOT-143
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 70°C) ²⁾
Thermal resistance
Channel-soldering point ²⁾
Symbol
V_DS
V_DG
V_GS
I_D
T_Ch
T_stg
P_tot
R_thChS
Value
5
7
-4 ... +0.5
80
150
-40...+150
250
<320
Unit
V
V
V
mA
°C
°C
mW
K/W
1) Dimensions see chapter Package Outlines
2) T_S is measured on the source 1 lead at the soldering point to the PCB.
Siemens Aktiengesellschaft
pg. 1/6
11.01.1996
HL EH PD 21