HYB3164165T Datasheet, PDF (2/30 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
This HYB3164(5)165 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is
fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)165 operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the
HYB3164(5)165 to be packaged in a 500mil wide TSOPII-54 plastic package. These packages
provide high system bit densities and are compatible with commonly used automatic testing and
insertion equipment.The HYB3164(5)165TL parts have a very low power „sleep mode“ supported
by Self Refresh.
Ordering Information
Type
HYB 3164165T-50
HYB 3164165T-60
HYB 3164165TL-50
HYB 3164165TL-60
HYB 3165165T-50
HYB 3165165T-60
HYB 3165165TL-50
HYB 3165165TL-60
Ordering
Code
on request
on request
on request
on request
on request
on request
on request
on request
Package
Descriptions
P-TSOPII-54-1
P-TSOPII-54-1
P-TSOPII-54-1
P-TSOPII-54-1
P-TSOPII-54-1
P-TSOPII-54-1
P-TSOPII-54-1
P-TSOPII-54-1
500 mil
500 mil
500 mil
500 mil
500 mil
500 mil
500 mil
500 mil
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
Pin Names
A0-A12
A0-A11
RAS
OE
I/O1-I/O16
UCAS, LCAS
WRITE
Vcc
Vss
Address Inputs for HYB 3164165T(L)
Address Inputs for HYB 3165165T(L)
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply ( + 3.3V)
Ground
Semiconductor Group
32