HYB3164165T Datasheet, PDF (18/30 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
V
IH
RAS
VIL
tRCD
tCRP
UCAS
V
IH
LCAS
VIL
tCSH
tRAS
tHPC
tCAS
tCP
t
CAS
Address
tASR ^{tRAH tASC tCAH}
V
IH
VIL
Row Column 1
tRAD
tASC t_CAH
Column 2
tRHCP
tRSH
tCAS
tRAL
tASC tCAH
Column N
VIH
WE
VIL
V
OH
OE
VOL
I/O
V
IH
(Output) _VIL
tRCS
tOES
tCAC
tAA
tCPA
t_OEA ^tOEHC
tOEHC
tCAC
tAA
tCPA
tRAC
tAA
tCAC
tCLZ
tOEP _tOEA
tOEZ
Data Out
1
tOEP _tOEA
tOEZ
Data Out
2
tRP
tCRP
tRRH
tRCH
tOFF
tOEZ
Data Out
N
WL6
“H” or “L”
Hyper Page Mode (EDO) Read Cycle (OE Control)
Semiconductor Group
48