HYB3164165T Datasheet, PDF (19/30 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
V
IH
RAS
VIL
tRCD
tCRP
V
IH
UCAS
LCAS
VIL
tCSH
tRAS
tHPC
tCAS
tCP
t
CAS
Address
tASR ^{tRAH tASC tCAH}
V
IH
VIL
Row Column 1
tRAD
tASC t_CAH
Column 2
tAA
tRHCP
tRSH
tCAS
tRAL
tASC tCAH
Column N
tAA
VIH
WE
VIL
V
OH
OE
VOL
I/O
V
IH
(Output) _VIL
tRCS
tRCH
tRCS ^tRCH
tRCS
tOES
tWPZ
tCAC
tCPA
tOEA
tWPZ
tCAC
tCPA
tRAC
tAA
tCAC
tCLZ
tWHZ
Data Out
1
tWHZ
Data Out
2
tRP
tCRP
tRRH
tRCH
tOFF
tOEZ
Data Out
N
WL7
“H” or “L”
Hyper Page Mode (EDO) Read Cycle (WE Control)
Semiconductor Group
49