HYB3164165T Datasheet, PDF (11/30 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 ˚C,V_CC = 3.3 V ± 0.3V , t_T = 2 ns
Parameter
Symbol
Limit Values
-50
-60
min. max. min. max.
OE pulse width
t_OEP
7
–
10
–
OE hold time from CAS high
t_OEHC 7
–
10
–
WE pulse width to output disable at CAS t_WPZ 7
–
10
–
high
Output buffer turn-off delay from WE t_WPZ 0
10
0
10
Unit Note
ns
ns
ns
ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write
t_PRWC
51
–
66
–
ns
cycle time
CAS precharge to WE
t_CPWD 41
–
49
–
ns
CAS before RAS refresh cycle
CAS setup time
t_CSR
5
–
5
–
ns
CAS hold time
t_CHR
8
–
10
–
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
ns
Write to RAS precharge time
t_WRP
8
–
10
–
ns
Write hold time referenced to RAS
t_WRH
8
–
10
–
ns
CAS-before-RAS counter test cycle
CAS precharge time (CAS-before-RAS t_CPT
35
–
40
–
ns
counter test cycle)
Self Refresh Cycle
RAS pulse width during self refresh
RAS precharge time during self refresh
CAS hold time during self refresh
t_RASS
t_RPS
t_CHS
100k _
84
_
-50 _
100k _
104 _
-50 _
ns 17
ns 17
ns 17
Semiconductor Group
41