HYB3164165T Datasheet, PDF (14/30 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
V
RAS
IH
VIL
UCAS
V
IH
LCAS
VIL
V
IH
Address
VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O
IH
(Inputs) _VIL
tRC
tRAS
tASR
tCSH
tRCD
tRSH
tCAS
tRAD
tASC
t_RAL
tCAH
Row
t_RAH
Column
tWCS
tCWL
t WP
tWCH
tRWL
tDS
tDH
Valid Data In
V
I/O
OH
(Outputs) _VOL
Hi Z
“H” or “L”
Write Cycle (Early Write)
Semiconductor Group
44
tRP
tCRP
tASR
.
Row
WL2