LC78681E Datasheet, PDF (4/23 Pages) Sanyo Semicon Device – Digital Signal Processor for Compact Disc Players

LC78681E
Allowable Operating Ranges at Ta = 25°C, V_SS = 0 V
Parameter
Supply voltage
Input high level voltage
Input low level voltage
Data setup time
Data hold time
High level clock pulse width
Low level clock pulse width
Data read access time
Command output time
Sub-Q read enable time
Subcode read cycle
Subcode read enable
Crystal oscillator frequency
Operating frequency range
Symbol
V_DD
V_IH (1)
V_IH (2)
V_IH (3)
V_IH (4)
V_IL (1)
V_IL (2)
V_IL (3)
V_IL (4)
t set up
t hold
t_WøH
t_WøL
t_RAC
t_RWC
t_SQE
t sc
t se
fX’tal
f op (1)
f op (2)
Conditions
V_DD
TEST1 to 5, AI, FZD, HFL, DEMO, M/L,
RES
SBCK, RWC, COIN, CQCK, CS
EFMIN
TES
TEST1 to 5, AI, FZD, HFL, DEMO, M/L,
RES
SBCK, RWC, COIN, CQCK, CS
EFMIN
TES
COIN, RWC: Figure 1
RWC: Figure 1
SBCK, CQCK: Figures 1, 2 and 3
CQCK, SBCK: Figures 1, 2 and 3
Figures 2 and 3
RWC: Figure 1
Figure 2, no RWC signal
Figure 3
Figure 3
X_IN, X_OUT
AI
EFMIN: V_IN ≥ 1 Vpp
min
4.5
0.7 V_DD
2.2
0.6 V_DD
0.8 V_DD
V_SS
V_SS
V_SS
V_SS
400
400
400
400
0
1000
400
2.0
Ratings
typ
11.2
136
16.9344
max
5.5
V_DD
V_DD
V_DD
V_DD
0.3 V_DD
0.8
0.4 V_DD
0.2 V_DD
400
20
10
Unit
V
V
V
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ms
µs
ns
MHz
MHz
MHz
Electrical Characteristics at Ta = 25°C, V_SS = 0 V, V_DD = 5 V
Parameter
Current drain
Input high level current
Input low level current
Output high level voltage
Symbol
I_DD
I_IH (1)
I_IH (2)
I_IL (1)
V_OH (1)
V_OH (2)
V_OH (3)
Conditions
AI, EFMIN, FZD, TES, SBCK, COIN,
CQCK, RES, HFL, RWC, M/L: V_IN = V_DD
TEST1 to 5, DEMO, CS:
V_IN = V_DD = 5.5 V
AI, EFMIN, FZD, TES, SBCK, COIN,
CQCK, RES, HFL, RWC, M/L: V_IN = V_SS
AO, PDO, EFMO, EFMO, CLV⁺, CLV ^–,
FOCS, FSEQ, PCK, TOFF, TGL, THLD,
JP⁺, JP^–, EMPH, EFLG, FSX, V/P:
I_OH = –1 mA
DOUT: I_OH = –12 mA
LASER, SQOUT, 16M, 4.2M, CONT,
WCLK, TEST7, LRCLK, WRQ, C2F,
DFOUT, DACLK, SFSY, LRSY, SBSY,
CK2, PW, ROMOUT, C2FCLK:
I_OH = –0.5 mA
min
25
–5
V_DD – 1
V_DD – 0.5
V_DD – 1
Ratings
typ
17
Unit
max
30
mA
5
µA
75
µA
µA
V
V
V
Continued on next page.
No. 4521-4/23