K4X56323PG Datasheet, PDF (9/23 Pages) Samsung semiconductor – 8M x32 Mobile-DDR SDRAM

K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Internal Temperature Compensated Self Refresh (TCSR)
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the three temperature ranges ; 45 °C and 85 °C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5 °C tolerance.
Self Refresh Current (IDD6)
Temperature Range
-E
-G
Unit
45 °C^*3
85 °C
Full Array 1/2 Array 1/4 Array Full Array 1/2 Array 1/4 Array
200
160
140
150
135
130
uA
450
300
250
300
250
225
Partial Array Self Refresh (PASR)
Note :
1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option.
2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- Full Array
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/2 Array
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/4 Array
Partial Self Refresh Area
Figure.4 EMRS code and TCSR , PASR
January 2006