K4X56323PG Datasheet, PDF (21/23 Pages) Samsung semiconductor – 8M x32 Mobile-DDR SDRAM

K4X56323PG - 7(8)E/G
Functional truth table
Current State
PRECHARGING
(DURING tRP)
ROW
ACTIVATING
(FROM ROW
ACTIVE TO
tRCD)
WRITE
RECOVERING
(DURING tWR
OR tCDLR)
CS RAS CAS WE
Address
L
H
H
LX
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
HX
L
L
L
L Op-Code, Mode-Add
L
H
H
LX
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
HX
L
L
L
L Op-Code, Mode-Add
L
H
H
LX
L
H
L
H BA, CA, A10
L
H
L
L BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
HX
L
L
L
L Op-Code, Mode-Add
Mobile-DDR SDRAM
Command
Burst Stop
READ/WRITE
Active
PRE/PREA
Refresh
MRS
Burst Stop
READ/WRITE
Active
PRE/PREA
Refresh
MRS
Burst Stop
READ
WRITE
Active
PRE/PREA
Refresh
MRS
Action
ILLEGAL^*2
ILLEGAL^*2
ILLEGAL^*2
NOP^*4(Idle after tRP)
ILLEGAL
ILLEGAL
ILLEGAL^*2
ILLEGAL^*2
ILLEGAL^*2
ILLEGAL^*2
ILLEGAL
ILLEGAL
ILLEGAL^*2
ILLEGAL^*2
WRITE
ILLEGAL^*2
ILLEGAL^*2
ILLEGAL
ILLEGAL
January 2006