K4X56323PG Datasheet, PDF (10/23 Pages) Samsung semiconductor – 8M x32 Mobile-DDR SDRAM

K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Absolute maximum ratings
Parameter
Symbol
Value
Voltage on any pin relative to V_SS
V_IN, V_OUT
-0.5 ~ 2.7
Voltage on V_DD supply relative to V_SS
V_DD
-0.5 ~ 2.7
Voltage on V_DDQ supply relative to V_SS
V_DDQ
-0.5 ~ 2.7
Storage temperature
T_STG
-55 ~ +150
Power dissipation
P_D
1.0
Short circuit current
I_OS
50
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
V
°C
W
mA
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, Tc = -25°C to 85°C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal VDD of 1.8V)
VDD
1.7
1.95
V
1
I/O Supply voltage
VDDQ
1.7
1.95
V
1
Input logic high voltage
VIH(DC)
0.7 x VDDQ VDDQ+0.3
V
2
Input logic low voltage
VIL(DC)
-0.3
0.3 x VDDQ V
2
Output logic high voltage
VOH(DC) 0.9 x VDDQ
-
V IOH = -0.1mA
Output logic low voltage
VOL(DC)
-
0.1 x VDDQ V IOL = 0.1mA
Input leakage current
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Note :
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
January 2006