K4H560438E-UC Datasheet, PDF (9/23 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM
16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks Double Data Rate SDRAM
General Description
The K4H560438E / K4H560838E is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x
8,388,608 words by 4/ 8/ bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe
allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating fre-
quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem-
ory system applications.
Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V_SS
V_IN, V_OUT
-0.5 ~ 3.6
V
Voltage on V_DD & V_DDQ supply relative to V_SS
V_DD, V_DDQ
-1.0 ~ 3.6
V
Storage temperature
T_STG
-55 ~ +150
°C
Power dissipation
P_D
1.5
W
Short circuit current
I_OS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Supply voltage(for device with a nominal VDD of 2.5V)
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Normal strengh driver) ;V_OUT = V_TT + 0.84V
Output High Current(Normal strengh driver) ;V_OUT = V_TT - 0.84V
Output High Current(Half strengh driver) ;V_OUT = V_TT + 0.45V
Output High Current(Half strengh driver) ;V_OUT = V_TT - 0.45V
Symbol
VDD
VDDQ
VREF
V_TT
VIH(DC)
VIL(DC)
VIN(DC)
VID(DC)
VI(Ratio)
II
IOZ
IOH
IOL
IOH
IOL
Min
2.3
2.3
0.49*VDDQ
VREF-0.04
VREF+0.15
-0.3
-0.3
0.36
0.71
-2
-5
-16.8
16.8
-9
9
Max
2.7
2.7
0.51*VDDQ
VREF+0.04
VDDQ+0.3
VREF-0.15
VDDQ+0.3
VDDQ+0.6
1.4
2
5
Unit Note
V
V
1
V
2
V
V
V
V
3
-
4
uA
uA
mA
mA
mA
mA
Note : 1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.
Peak-to peak noise on VREF may not exceed +/-2% of the dc value.
2. V_TT is not applied directly to the device. V_TT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
Rev. 1.1 October, 2004