K4H560438E-UC Datasheet, PDF (14/23 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Specification
DDR333
DDR200/266
TBD
1.2 V
TBD
1.2 V
TBD
2.4 V-ns
TBD
2.4 V-ns
VDDQ
Overshoot
5
4
Maximum Amplitude = 1.2V
3
2
Area = 2.4V-ns
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.1 October, 2004