K4H560438E-UC Datasheet, PDF (12/23 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM I_DD spec table
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
90
110
3
25
20
35
55
140
160
170
3
1.5
260
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
90
115
3
25
20
35
55
160
160
170
3
1.5
280
64Mx4 (K4H560438E)
AA(DDR266@CL=2.0)
90
110
3
20
18
30
45
120
135
160
3
1.5
260
32Mx8 (K4H560838E)
AA(DDR266@CL=2.0)
90
115
3
20
18
30
45
140
135
160
3
1.5
280
DDR SDRAM
(V_DD=2.7V, T = 10°C)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
80
100
3
20
18
30
45
120
135
160
3
1.5
240
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
80
105
3
20
18
30
45
140
135
160
3
1.5
250
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Rev. 1.1 October, 2004