K4H560438E-UC Datasheet, PDF (22/23 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM
90
80
70
60
50
40
30
20
10
0
0.0
1.0
2.0
Pullup Characteristics for Weak Output Driver
Maximum
Typical High
Typical Low
Minimum
Vout(V)
0.0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
1.0
2.0
Minumum
Typical Low
Typical High
Maximum
Pulldown Characteristics for Weak Output Driver
Vout(V)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.1 October, 2004