DS_K7B803625B Datasheet, PDF (9/19 Pages) Samsung semiconductor – 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

K7B803625B
K7B801825B
256Kx36 & 512Kx18 Synchronous SRAM
DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
Parameter
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
Symbol
Test Conditions
Min
IIL VDD=Max ; VIN=VSS to VDD
-2
IOL Output Disabled, Vout=VSS to VDDQ
-2
Device Selected, IOUT=0mA,
-65
-
ICC
ZZ≤VIL , Cycle Time ≥ tCYC Min
-75
-
Device deselected, IOUT=0mA,
-65
-
ISB ZZ≤VIL, f=Max, All Inputs≤0.2V or
≥ VDD-0.2V
-75
-
Device deselected, IOUT=0mA, ZZ≤0.2V, f=0,
ISB1
-
All Inputs=fixed (VDD-0.2V or 0.2V)
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
ISB2 _{f=Max, All Inputs≤VIL or ≥VIH}
-
VOL IOL=8.0mA
-
VOH IOH=-4.0mA
2.4
VOL IOL=1.0mA
-
VOH IOH=-1.0mA
2.0
VIL
-0.3*
VIH
2.0
VIL
-0.3*
VIH
1.7
Max
+2
+2
300
280
140
130
100
60
0.4
-
0.4
-
0.8
VDD+0.3
0.7
VDD+0.3
Notes : The above parameters are also guaranteed at industrial temperature range.
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V
Unit
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
Notes
1,2
3
3
VIH
VSS
VSS-1.0V
20% tCYC(MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
* The above parameters are also guaranteed at industrial temperature range.
-9-
Nov. 2003
Rev 3.0