DS_K7B803625B Datasheet, PDF (18/19 Pages) Samsung semiconductor – 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

K7B803625B
K7B801825B
256Kx36 & 512Kx18 Synchronous SRAM
APPLICATION INFORMATION
DEPTH EXPANSION
The Samsung 512Kx18 Synchronous Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 512K depth to 1M depth without extra logic.
Data
Address
A[0:19]
A[19]
A[0:18]
I/O[0:71]
A[19]
A[0:18]
CLK
Microprocessor
Address
CLK
Cache
Controller
Address Data
CS2
CS2
CLK
ADSC
WEx
OE
512Kx18
SB
SRAM
(Bank 0)
CS1
ADV ADSP
Address Data
CS2
CS2
CLK
ADSC
WEx
OE
512Kx18
SB
SRAM
(Bank 1)
CS1
ADV ADSP
ADS
INTERLEAVE READ TIMING (Refer to non-interleave write timing for interleave write timing)
(ADSP CONTROLLED , ADSC=HIGH)
CLOCK
tSS
tSH
ADSP
ADDRESS ^A1
[0:n]
tWS
tWH
WRITE
tAS
tAH
A2
CS1
tCSS
tCSH
An+1
ADV
Bank 0 is selected by CS2, and Bank 1 deselected by CS2
tADVS
tADVH
Bank 0 is deselected by CS2, and Bank 1 selected by CS2
OE
Data Out
(Bank 0)
Data Out
(Bank 1)
tOE
tLZOE
Q1-1
Q1-2
Q1-3
tHZC
Q1-4
tCD
tLZC
*Notes : n = 14 32K depth , 15 64K depth
16 128K depth , 17 256K depth
18 512K depth , 19 1M depth
Q2-1 Q2-2
Q2-3
Q2-4
Don′t Care
Undefined
- 18 -
Nov. 2003
Rev 3.0