DS_K7B803625B Datasheet, PDF (1/19 Pages) Samsung semiconductor – 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

K7B803625B
K7B801825B
256Kx36 & 512Kx18 Synchronous SRAM
Document Title
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
1.0
2.0
2.1
3.0
History
Initial draft
Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
1. Final spec release
2. Change ISB2 form 50mA to 60mA
Change ordering information( remove 225MHz at SPB)
1. Delete 119BGA package
1. Remove x32 organization
2. Remove -85 speed bin
Draft Date Remark
May. 18 . 2001 Preliminary
Aug. 11. 2001 Preliminary
Aug. 28. 2001 Preliminary
Nov. 16. 2001 Final
April. 01. 2002 Final
April. 04. 2003 Final
Nov. 17. 2003 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 3.0