DS_K7B803625B Datasheet, PDF (6/19 Pages) Samsung semiconductor – 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

K7B803625B
K7B801825B
256Kx36 & 512Kx18 Synchronous SRAM
FUNCTION DESCRIPTION
The K7B803625B and K7B801825B are synchronous SRAM designed to support the burst address accessing sequence of the
Power PC based microprocessor. All inputs (with the exception of OE, LBO and ZZ) are sampled on rising clock edges. The start and
duration of the burst access is controlled by ADSC, ADSP and ADV and chip select pins.
The accesses are enabled with the chip select signals and output enabled signals. Wait states are inserted into the access with ADV.
When ZZ is pulled high, the SRAM will enter a Power Down State. At this time, internal state of the SRAM is preserved. When ZZ
returns to low, the SRAM normally operates after 2cycles of wake up time. ZZ pin is pulled down internally.
Read cycles are initiated with ADSP(or ADSC) using the new external address clocked into the on-chip address register when both
GW and BW are high or when BW is low and WEa, WEb, WEc, and WEd are high. When ADSP is sampled low, the chip selects are
sampled active, and the output buffer is enabled with OE. the data of cell array accessed by the current address are projected to the
output pins.
Write cycles are also initiated with ADSP(or ADSC) and are differentiated into two kinds of operations; All byte write operation and
individual byte write operation.
All byte write occurs by enabling GW(independent of BW and WEx.), and individual byte write is performed only when GW is high
and BW is low. In K7B803625B, a 256Kx36 organization, WEa controls DQa0 ~ DQa7 and DQPa, WEb controls DQb0 ~ DQb7 and
DQPb, WEc controls DQc0 ~ DQc7 and DQPc and WEd controls DQd0 ~ DQd7 and DQPd.
CS1 is used to enable the device and conditions internal use of ADSP and is sampled only when a new external address is loaded.
ADV is ignored at the clock edge when ADSP is asserted, but can be sampled on the subsequent clock edges. The address
increases internally for the next access of the burst when ADV is sampled low.
Addresses are generated for the burst access as shown below, The starting point of the burst sequence is provided by the external
address. The burst address counter wraps around to its initial state upon completion. The burst sequence is determined by the state
of the LBO pin. When this pin is Low, linear burst sequence is selected. And this pin is High, Interleaved burst sequence is selected.
BURST SEQUENCE TABLE
LBO PIN
HIGH
First Address
Fourth Address
Case 1
A1
A0
0
0
0
1
1
0
1
1
Case 2
A1
A0
0
1
0
0
1
1
1
0
Case 3
A1
A0
1
0
1
1
0
0
0
1
(Interleaved Burst)
Case 4
A1
A0
1
1
1
0
0
1
0
0
BQ TABLE
LBO PIN
LOW
First Address
Fourth Address
Case 1
A1
A0
0
0
0
1
1
0
1
1
Case 2
A1
A0
0
1
1
0
1
1
0
0
Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.
Case 3
A1
A0
1
0
1
1
0
0
0
1
(Linear Burst)
Case 4
A1
A0
1
1
0
0
0
1
1
0
-6-
Nov. 2003
Rev 3.0