K4T1G084QD Datasheet, PDF (5/27 Pages) Samsung semiconductor – 1Gb D-die DDR2 SDRAM Specification

K4T1G084QD
K4T1G164QD
3.0 Package Pinout/Mechanical Dimension & Addressing
DDR2 SDRAM
3.1 x8 package pinout (Top View) : 60ball FBGA Package
1
2
3
7
8
9
VDD
NU/
RDQS
VSS
A
DQ6
VSSQ
DM/
RDQS
B
VDDQ DQ1 VDDQ C
VSSQ DQS VDDQ
DQS VSSQ DQ7
VDDQ DQ0 VDDQ
DQ4 VSSQ DQ3 D DQ2 VSSQ DQ5
VDDL VREF VSS ^E VSSDL CK VDD
CKE WE F RAS CK ODT
BA2 BA0 BA1 ^G CAS CS
A10/AP A1
H
A2
A0 VDD
VSS A3
A5
J
A6
A4
A7
A9
K
A11
A8
VSS
VDD A12
NC
L
NC A13
Note:
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in
function and timing to strobe pair DQS & DQS and input masking function
is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL.
Ball Locations (x8)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the Package)
123456789
A
+ ++
B
+ ++
C
+ ++
D
+ ++
E
+ ++
F₊
+ ++
G
+ ++
+
H₊
+ ++
J
+ ++
+
K₊
+ ++
L
+ ++
+
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Rev. 1.0 March 2007