K4T1G084QD Datasheet, PDF (10/27 Pages) Samsung semiconductor – 1Gb D-die DDR2 SDRAM Specification

K4T1G084QD
K4T1G164QD
5.0 DDR2 SDRAM Addressing
1Gb Addressing
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
256Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9,A11
128Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
* Reference information: The following tables are address mapping information for other densities.
256Mb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
64Mb x4
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9,A11
32Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
512Mb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
128Mb x4
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9,A11
64Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9
2Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
512Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9,A11
256Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9
4Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address/page size
1 Gb x4
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9,A11
512Mb x 8
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9
DDR2 SDRAM
64Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A12
A0 ~ A9
16Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A8
32Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
128Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
256Mb x16
8
BA0 ~ BA2
A10/AP
A0 - A14
A0 - A9
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Rev. 1.0 March 2007