K4T1G084QD Datasheet, PDF (20/27 Pages) Samsung semiconductor – 1Gb D-die DDR2 SDRAM Specification

K4T1G084QD
K4T1G164QD
DDR2 SDRAM
Parameter
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
Symbol
t_CKE
t_AOND
t_AON
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
t_AONPD
t_AOFD
t_AOF
ODT turn-off (Power-Down mode)
t_AOFPD
ODT to power down entry latency
tANPD
ODT power down exit latency
tAXPD
OCD drive mode output delay
tOIT
Minimum time clocks remains ON after CKE asyn-
chronously drops LOW
tDelay
DDR2-800
min
max
DDR2-667
min
max
DDR2-533
min
max
DDR2-400
min
max
Units
3
3
3
3
tCK
2
2
2
2
2
2
2
2
tCK
tAC(min)
tAC(max)
+ 0.7
tAC(min)
tAC(max)
+0.7
tAC(min)
tAC(max)
+1
tAC(min)
tAC(max)
+1
ns
tAC(min)+
2
2tCK +
tAC(max)
+1
tAC(min)+
2
2tCK+tAC tAC(min)+
(max)+1
2
2tCK+tA
C(max)+
1
tAC(min)+
2
2tCK+tAC
(max)+1
ns
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
tCK
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
ns
tAC(min)+
2
2.5tCK +
tAC(max)
+1
tAC(min)+
2
2.5tCK+t
AC(max)
+1
tAC(min)+
2
2.5tCK+
tAC(max)
+1
tAC(min)+
2
2.5tCK+
tAC(max)
+1
ns
3
3
3
3
tCK
8
8
8
8
tCK
0
12
0
12
0
12
0
12
ns
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
ns
Notes
36
13, 25
26
24
18 of 29
Rev. 1.0 March 2007